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SE2N7002K(ESD) Datasheet
Datasheet specifications
| Datasheet's name | SE2N7002K(ESD) |
|---|---|
| File size | 58.73 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet SE2N7002K(ESD) |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: SINO-IC SE2N7002K(ESD)
- Power Dissipation (Pd): 350mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 300mA
- Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,500mA
- Package: SOT-23(TO-236)
- Manufacturer: SINO-IC